The Wide Bandgap (WBG) materials will power future applications for high performance in areas such as vehicle electrification, solar and wind power, cloud computing, EV (electric vehicle) charging, 5G communications and many more. ON Semiconductor is contributing to the development of universal standards to help advance the adoption of Wide Bandgap (WBG) power technologies.
シリコンカーバイド (SIC) ダイオード
Silicon Carbide (SiC) diodes from ON Semiconductor include AEC-Q101 Qualified and PPAP Capable options specifically engineered and qualified for automotive and industry applications. Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon.
Silicon Carbide (SiC) MOSFETs
Silicon Carbide (SiC) MOSFETs from ON Semiconductor are designed to be fast and rugged. All of ON Semiconductor’s SiC MOSFETs include AEC-Q101 Qualified and PPAP Capable options specifically engineered and qualified for automotive and industry applications. System benefits include highest efficiency by lowering power loss, greater power density, higher operating frequency, increased temperature operation, reduced EMI, and most importantly reduced system size and cost.