MOSFETs | FDD6N50

Power MOSFET、Nチャネル、UniFETTM、500 V、6 A、900mΩ、DPAK

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Overview

UniFETTM MOSFETは、プレーナストライプおよびDMOS技術をベースとした高電圧MOSFETファミリーです。このMOSFETは、オン抵抗を低減し、スイッチング性能とアバランシェエネルギー強度を向上させるよう構成されています。このデバイスファミリーは、力率改善（PFC)、フラットパネルディスプレイ（FPD）TV電源、ATX、電子ランプバラストなどのスイッチング電源コンバーターアプリケーションに適しています。

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  • RDS(on) = 900mΩ (最大)@ VGS = 10V、ID = 3A
  • 少量のゲート電荷 (通常 12.8nC)
  • 低Crss (通常 9pF)
  • 100%電子なだれテスト済み
  • 改良されたdv/dt機能

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDD6N50TM

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Last Shipments

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

500

900

N-Channel

Single

±30

5

6

89

-

-

-

12.8

720

Price N/A

More Details

FDD6N50TM-WS

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Last Shipments

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

500

900

N-Channel

Single

±30

5

6

89

-

-

-

12.8

720

Price N/A

More Details

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