MOSFETs | HUF75639S_F085A

100V、56A、21mΩ、D2PAK
Nチャンネル UltraFET® Trench

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Overview

これらのNチャンネルパワーMOSFETは、革新的なUltraFET® プロセスを使用して製造されています。 この高度なプロセス技術はシリコン面積あたりの非常に低いオン抵抗を実現し、優れた性能を発揮します。 このデバイスは電子なだれモードで高エネルギーに耐えることができ、ダイオードは非常に低い逆回復時間と保存電荷を示します。 ポータブル機器およびバッテリー駆動製品のスイッチングレギュレーター、スイッチングコンバーター、モータードライバー、リレードライバー、低電圧バススイッチ、パワーマネージメントなど、電力効率が重要な用途のために設計されています。

  • Switching Regulators
  • Switching Converters
  • Motor Drivers
  • Relay Drivers
  • Low Voltage Bus Switches
  • Power Management in Portable and Battery-Operated Products
  • 56 A、100 V
  • ピーク電流対パルス幅カーブ
  • UIS定格曲線
  • 関連する文献

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

HUFA75639S3ST-F085A

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Obsolete

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

N

100

25

N-Channel

Single

±20

4

56

200

-

-

-

57

2000

Price N/A

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