IRLM120A

NチャネルA-FET 200V、1.13A、800mΩ

Overview

特長

電子なだれ耐性技術
堅牢性に優れたゲート酸化物技術 ν 低入力容量
ゲート電荷を向上
広い安全動作領域
低リーク電流: 10 µA (最大) @ V_DS = 200V
低R_DS(ON): 0.609 Ω (通常)

材料組成

製品変更通知

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

IRLM120ATF

Last Shipments

SOT-223-4 / TO-261-4

318H-01

250

REEL

4000

200

N-Channel

Single

±20

1.13

2.7

220

10.2

340

Price N/A

製品番号:

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MOSFETs | IRLM120A

NチャネルA-FET 200V、1.13A、800mΩ

Overview

Product List

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