MOSFETs | FQD3P50TM_F085

500V P チャネル MOSFET

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これら P チャネル・エンハンスメントモード電界効果トランジスタは独自のプレーナ・ストライプ、DMOS 技術を使用して製造されています。特に、この高度な技術は、オン抵抗を最小限に抑え、優れたスイッチング性能を提供し、アバランシェおよび転流モードでの高エネルギー・パルスに対応するよう構成されています。これらのデバイスは、相補型ハーフブリッジ構成に基づく電子ランプ・バラストに最適です。

  • パワートレイン
  • - 2.1A、-500V、RDS(on)=4.9Ω@VGS=-10V
  • 少量のゲート電荷 (通常 18 nC)
  • 低Crss(通常9.5pF)
  • 高速スイッチング
  • 100%電子なだれテスト済み
  • 改良されたdv/dt能力
  • AEC Q101認定取得
  • RoHS対応

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