Single N-Channel Power MOSFET, 20V, 5.5A, 38mΩ

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Overview

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.

  • Load Switch
  • Synchronous Boost Converter
  • Battery Charger
  • Power Bank
  • English Learning System
  • Low On-Resistance
  • High-Speed Switching
  • 1.8V drive
  • ESD Diode-Protected Gate
  • Ultra small Package MCPH6 (2.0mm×2.1mm×0.85mmt)
  • Pb-Free and RoHS compliance

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製品:

1

共有

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Orderable Parts:

1

製品

状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

MCH6421-TL-E

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Last Shipments

CAD Model

Pb

A

H

P

SC-88FL / MCPH-6

1

260

REEL

3000

N

20

-

N-Channel

Single

12

1.3

5.5

1.5

61

38

7.5

5.1

410

Price N/A

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