MOSFETs | FDMC4435BZ

P チャネル Power Trench® MOSFET -30V、-18A、20mΩ

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Overview

この P チャネル MOSFET は、オン抵抗を最小限に抑えるように特別に構成された、オン・セミコンダクターの高度な Power Trench® プロセスを使用して製造されます。このデバイスは、ノート PC やポータブル・バッテリ・パックで一般的な電源管理およびロード・スイッチ・アプリケーションに最適です。

  • ă�“ă�®čŁ˝ĺ“�ă�Żĺ¤šć§�ă�Şç”¨é€”ă�«é�©ă�—ă�źć±Žç”¨ĺ“�ă�§ă�™ă€‚
  • 最大 rDS(on) = 20.0mΩ @ VGS = -10V、ID = -8.5A
  • 最大 rDS(on) = 37.0mΩ @ VGS = -4.5V、ID = -6.3A
  • バッテリ用途の拡張VGSS範囲 (-25V)
  • 超低rDS(on)
    用の高性能トレンチ技術。
  • 高い電力および電流処理能力
  • HBM ESD保護レベル>7kV通常
  • UIL 100%テスト済み
  • 端子は鉛フリーでRoHS対応です。

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

FDMC4435BZ

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Active

CAD Model

Pb

A

H

P

WDFN-8

511DR

1

260

REEL

3000

Y

-30

20

P-Channel

Single

25

-3

-18

31

-

37

26

17

1540

$0.3633

More Details

FDMC4435BZ-F126

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Last Shipments

CAD Model

Pb

A

H

P

WDFN-8

511DH

1

260

REEL

3000

N

-30

20

P-Channel

Single

25

-3

-18

31

-

37

26

17

1540

Price N/A

More Details

FDMC4435BZ-F127

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Active

CAD Model

Pb

A

H

P

WDFN-8

511DR

1

260

REEL

3000

N

-30

20

P-Channel

Single

25

-3

-18

31

-

37

26

17

1540

$0.4737

More Details

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