FDMD8680

デュアル N チャネル PowerTrench® MOSFET 60V、66A、4.7mΩ

Overview

このパッケージはソース共通構成で内部で接続されている N チャネル・デバイスを統合します。これにより、非常に低いパッケージ寄生成分と、底面の共通ソースパッドへの最適化された熱経路が可能になります。とても小さいフットプリント (5 x 6 mm) で電力密度が上昇します。

アプリケーション

This product is general usage and suitable for many different applications.

特長

Common source configuration to Eliminate PCB Routing
Large Source Pad on Bottom of Package for Enhanced Thermals
Max r_DS(on) = 4.7 mΩ at V_GS = = 10 V, I_D = 16 A
Max r_DS(on) = 6.4 mΩ at V_GS = = 8 V, I_D = 14 A
Ideal for Flexible Layout in Secondary Side Synchronous Rectification
100% UIL Tested
Termination is Lead-free and RoHS Compliant

材料組成

製品変更通知

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状態

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)DSS Min (V)

R_DS(on) Max @ V_GS = 10 V (mΩ)

Channel Polarity

Configuration

V_GS Max (V)

V_GS(th) Max (V)

I_D Max (A)

P_D Max (W)

R_DS(on) Max @ V_GS = 2.5 V (mΩ)

R_DS(on) Max @ V_GS = 4.5 V (mΩ)

Q_g Typ @ V_GS = 4.5 V (nC)

Q_g Typ @ V_GS = 10 V (nC)

C_iss Typ (pF)

Reference Price

FDMD8680

Lifetime

PQFN-8

483AS

260

REEL

3000

Q1=Q2=4.7

N-Channel

Dual

±20

3805

$1.6308

製品番号:

代理店		Stock	BUY

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MOSFETs | FDMD8680

デュアル N チャネル PowerTrench® MOSFET 60V、66A、4.7mΩ

Overview

Product List

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