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NGTB30N60FLWG: IGBT, 600 V, 30 A, FS1 Solar/UPS

Datasheet: IGBT
Rev. 1 (176.0kB)
製品概要
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This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
特長   利点
     
  • Low Saturation Voltage using Trench with Field Stop Technology
 
  • Reduces System Power Dissipation
  • Low Switching Loss Reduces System Power Dissipation
   
  • Soft Fast Reverse Recovery Diode
   
  • Optimized for High Speed Switching
   
  • 5µs Short Circuit Capability
   
アプリケーション
  • Solar Inverters
  • Uninterruptible Power Supplies(UPS)
製品
状態
Compliance
内容
外形
MSL
梱包形態
予算 価格/Unit
タイプ
Case Outline
タイプ
Temperature
タイプ
数量
NGTB30N60FLWG Obsolete
Pb-free
Halide free
NGTB30N60FLWG TO-247-3 340L-02 NA Tube 30  
マーケットリードタイム(週) : Contact Factory
Case Outline
340L-02   
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