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NVHL160N120SC1: Silicon Carbide MOSFET, N‐Channel, 1200 V, 160 mΩ, TO247−3L

Datasheet: MOSFET - SiC Power, Single N-Channel, 1200 V, 160 mOhms, 17 A
Rev. 1 (234kB)
製品概要
»材料組成を表示
» 製品変更通知
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
特長   利点
     
  • 1200V rated
 
  • Blocking Voltage
  • High Speed Switching and Low Capacitance
 
  • Coss = 50
  • Qualified for Automotive According to AEC−Q101
 
  • Devices are Pb−Free and are RoHS Compliant
アプリケーション   最終製品
  • DC-DC Power
  • On Board Charging
 
  • EV/HEV
評価/開発ツール情報
製品 状態 Compliance 簡単な説明 アクション
SECO-HVDCDC1362-15W15V-GEVB Active
Pb-free
15 W SiC High-Voltage Auxiliary Power Supply for HEV & BEV Applications
SECO-HVDCDC1362-40W15V-GEVB Active
Pb-free
40 W SiC high-voltage auxiliary power supply for HEV & BEV applications
Availability & Samples
Specifications
製品
状態
Compliance
内容
外形
MSL
梱包形態
予算 価格/Unit
タイプ
Case Outline
タイプ
Temperature
タイプ
数量
NVHL160N120SC1 Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVHL160N120SC1, Silicon Carbide MOSFET, N?Channel, 1200 V, 160 m?, TO247?3L TO-247-3LD 340CX NA Tube 450 $5.6319
マーケットリードタイム(週) : 4 to 8
ON Semiconductor   (2020-09-02 00:00) : 2,250

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NVHL160N120SC1  
 $5.6319 
Pb
A
H
P
 Active   
N-Channel
Single
1200
26
160
24
40
175
TO-247-3LD
Case Outline
340CX   
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特集ビデオ
Automotive High Voltage Auxiliary Power Supply
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