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FCH165N65S3R0: Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-247

Datasheet: MOSFET — Power, N-Channel, SUPERFET III, Easy Drive, 650 V, 19 A, 165 mΩ
Rev. 0 (268kB)
製品概要
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SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
特長   利点
     
  • 700 V @ TJ = 150 °C
 
  • Higher system reliability at low temperature operation
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF)
 
  • Low switching loss
  • Ultra Low Gate Charge (Typ. Qg = 39 nC)
 
  • Low switching loss
  • Optimized Capacitance
 
  • Lower peak Vds and lower Vgs oscillation
  • 100% Avalanche Tested
   
  • RoHS Compliant
   
  • Typ. RDS(on) = 140 mΩ
   
  • Internal Gate Resistance: 0.5 Ω
   
アプリケーション   最終製品
  • Telecommunication
  • Cloud system
  • Industrial
 
  • Telecom power
  • Server power
  • EV charger
  • Solar / UPS
Availability & Samples
Specifications
Intaractive Block Diagram
製品
状態
Compliance
内容
外形
MSL
梱包形態
予算 価格/Unit
タイプ
Case Outline
タイプ
Temperature
タイプ
数量
FCH165N65S3R0-F155 Active
Pb-free
FCH165N65S3R0 TO-247-3 340CH NA Tube 450 $1.4837
マーケットリードタイム(週) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
FCH165N65S3R0-F155  
 $1.4837 
Pb
 Active   
N-Channel
Single
650
30
4.5
19
154
165
39
TO-247-3
Case Outline
340CH   
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